JPH0648880Y2 - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPH0648880Y2 JPH0648880Y2 JP14987188U JP14987188U JPH0648880Y2 JP H0648880 Y2 JPH0648880 Y2 JP H0648880Y2 JP 14987188 U JP14987188 U JP 14987188U JP 14987188 U JP14987188 U JP 14987188U JP H0648880 Y2 JPH0648880 Y2 JP H0648880Y2
- Authority
- JP
- Japan
- Prior art keywords
- film
- titanium
- aluminum
- electrode
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 49
- 239000010936 titanium Substances 0.000 claims description 49
- 229910052719 titanium Inorganic materials 0.000 claims description 49
- 229910052782 aluminium Inorganic materials 0.000 claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 35
- 230000004888 barrier function Effects 0.000 claims description 31
- 229910000838 Al alloy Inorganic materials 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 238000002161 passivation Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910010303 TiOxNy Inorganic materials 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001295 No alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- XOUPWBJVJFQSLK-UHFFFAOYSA-J titanium(4+);tetranitrite Chemical compound [Ti+4].[O-]N=O.[O-]N=O.[O-]N=O.[O-]N=O XOUPWBJVJFQSLK-UHFFFAOYSA-J 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14987188U JPH0648880Y2 (ja) | 1988-11-16 | 1988-11-16 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14987188U JPH0648880Y2 (ja) | 1988-11-16 | 1988-11-16 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0270461U JPH0270461U (en]) | 1990-05-29 |
| JPH0648880Y2 true JPH0648880Y2 (ja) | 1994-12-12 |
Family
ID=31422499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14987188U Expired - Lifetime JPH0648880Y2 (ja) | 1988-11-16 | 1988-11-16 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0648880Y2 (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2805663B2 (ja) * | 1991-02-19 | 1998-09-30 | ソニー株式会社 | 配線形成方法 |
-
1988
- 1988-11-16 JP JP14987188U patent/JPH0648880Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0270461U (en]) | 1990-05-29 |
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